Enhancement of thermal diffusion of delta-doped Sb in SiGe

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 226-229

  Nakagawa, K ^a   Kojima, H ^a   Sugii, N ^a   Yamaguchi, S ^a   Miyao, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CRYSTALLIZATION; EPITAXIAL GROWTH; MASS SPECTROMETRY; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL DIFFUSION IN SOLIDS;

INDUCTIVELY-COUPLED-PLASMA MASS SPECTROMETRY; SILICON GERMANIDE; SOLID PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0034226930     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00812-9     Document Type: Article

References (5)

1. Sugii N., Nakagawa K., Kimura Y., Miyao M. Jpn. J. Appl. Phys. 37:1998;1308.
2. Sugii N., Nakagawa K., Yamaguchi S., Miyao M. Jpn. J. Appl. Phys. 38:1999;2424.
3. Nakagawa K., Kimura Y., Miyao M. J. Cryst. Growth. 175/176:1997;481.
4. Nakagawa K., Sugii N., Yamaguchi S., Miyao M. J. Cryst. Growth. 201/202:1999;560.
5. Fischetti M.V., Laux S.L. J. Appl. Phys. 80:1996;2234.