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Volumn 201, Issue , 1999, Pages 560-563
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Ge concentration dependence of Sb surface segregation during SiGe MBE
a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
COMPOSITION EFFECTS;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTING ANTIMONY;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
THERMAL EFFECTS;
DELTA-DOPING METHOD;
SURFACE SEGREGATION;
MOLECULAR BEAM EPITAXY;
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EID: 0032656274
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)01389-X Document Type: Article |
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Times cited : (22)
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References (3)
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