Reduction of SiGe heterointerface mixing by atomic hydrogen irradiation during molecular beam epitaxy and its mechanism

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 481-485

  Nakagawa, Kiyokazu ^a   Kimura, Yoshinobu ^a   Miyao, Masanobu ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; HYDROGEN; IRRADIATION; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEMICONDUCTOR GROWTH; SILICON ALLOYS; SURFACE PHENOMENA; THERMAL EFFECTS;

ATOMIC HYDROGEN IRRADIATION; GERMANIUM SURFACE SEGREGATION;

HETEROJUNCTIONS;

EID: 0031145737     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00859-7     Document Type: Article

References (5)

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