Isotropic nitride etching for thin nitride barrier self-aligned contact (TNBSAC) in an inductively coupled plasma chemical etcher

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3507, Issue , 1998, Pages 181-189

  Kim, Jeong Ho ^a   Ryu, Jae Ok ^a   Kim, Jong Sam ^a   Kim, Jin Woong ^a   Seol, Yeo Song ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Design rule; Isotropic nitride etching; Oxide etching barrier; SAC; Short free connection; TNBSAC

Indexed keywords

DRY ETCHING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC PROPERTIES; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; LITHOGRAPHY; METALLIZING; PLASMA ETCHING; SILICATES;

CONTACT HOLE; INDUCTIVELY COUPLED PLASMA CHEMICAL ETCHER; ISOTROPIC NITRIDE ETCHING; THIN NITRIDE BARRIER SELF ALIGNED CONTACT;

NITRIDES;

EID: 0037997143     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.324340     Document Type: Conference Paper

References (5)

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2. 3F/Ar Chemistry", Presented at The 193rd Meeting of the Electrochemical Society, Abst. 182, 1998.
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5. Dennis M. Manos and Daniel L. Flamm, Plasma Etching an Introduction, Academic Press, pp. 118-124, 1989.