Molecular beam epitaxial growth and photoluminescence investigation of Si1-yCy layers

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 33-40

  Zerlauth, S ^a   Penn, C ^a   Seyringer, H ^a   Stangl, J ^a   Brunthaler, G ^a   Bauer, G ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Carbon; Molecular beam epitaxy; Photoluminescence; Rocking curves; Silicon; X ray

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

X RAY ROCKING CURVES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032068404     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00439-8     Document Type: Article

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