Gain coefficient, quantum efficiency, transparency current density, and internal loss of the AlGaAs-GaAs-based lasers on Si substrate

IEEE Photonics Technology Letters

Volumn 11, Issue 12, 1999, Pages 1563-1565

  Kazi, Zaman Iqbal ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTATIONAL METHODS; CURRENT DENSITY; ELECTRIC LOSSES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; TRANSPARENCY;

GAIN COEFFICIENT; OPTICAL CONFINEMENT FACTOR;

QUANTUM WELL LASERS;

EID: 0033323629     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.806847     Document Type: Article

References (11)

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