AlGaAs/GaAs laser diodes with GaAs islands active region on a Si substrate with higher characteristic temperature

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 74-76

  Kazi, Zaman Iqbal ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Characteristic temperature; Confinement factor; Dark line defects; Quantum efficiency

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

CHARACTERISTIC TEMPERATURE; CONFINEMENT FACTOR; DARK LINE DEFECTS;

SEMICONDUCTOR LASERS;

EID: 0032686352     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.74     Document Type: Article

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