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Volumn 70, Issue 18, 1997, Pages 2398-2400

Structural study of InAs quantum boxes grown by molecular beam epitaxy on a (001) GaAs-on-Si substrate

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0037495896     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118863     Document Type: Article
Times cited : (24)

References (20)
  • 14
    • 6044242768 scopus 로고
    • French Patent, Report No. 9 000 229
    • J. M. Gérard and C. Weisbuch, French Patent, Report No. 9 000 229 (1990).
    • (1990)
    • Gérard, J.M.1    Weisbuch, C.2
  • 17
    • 85033302558 scopus 로고    scopus 로고
    • note
    • Some other samples which contained InAs islands embedded by GaAs (Ref. 11) or InP (Ref. 7) were also examined by this method and by classical cross-sectional and plan-view observation, with a good agreement.
  • 18
    • 85033284266 scopus 로고    scopus 로고
    • note
    • 9 for pyramidal InAs islands, a decrease in lateral size of an order of magnitude of 10 Å is obtained for a 0.03 eV shift.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.