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Some other samples which contained InAs islands embedded by GaAs (Ref. 11) or InP (Ref. 7) were also examined by this method and by classical cross-sectional and plan-view observation, with a good agreement.
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18
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85033284266
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note
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9 for pyramidal InAs islands, a decrease in lateral size of an order of magnitude of 10 Å is obtained for a 0.03 eV shift.
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19
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