Analysis of Neutron Damage in High-Temperature Silicon Carbide JFETs

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1884-1894

  McLean, F Barry ^a   McGarrity, James M ^a   Scozzie, Charles J ^a   Tipton, C Wesley ^a   DeLancey, W Merle ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; HALL EFFECT; IONIZATION OF SOLIDS; NEUTRONS; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

CARRIER MOBILITY; DONOR ATOMS; NEUTRON INDUCED DISPLACEMENT DAMAGE EFFECTS; PARTIAL IONIZATION;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0028699522     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340520     Document Type: Article

References (22)

1. J. M. McGarrity, F. B. McLean, W. M. DeLancey, J. Palmour, C. Carter, J. Edmond, and R. E. Oakley, “Silicon Carbide JFET Radiation Response,” IEEE Trans. Nucl. Sci. 39, p. 1974, 1992.
2. W. Suttrop, G. Pensl, W. J. Choyke, R. Stein, and S. Leibenzeder, “Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 611-Silicon Carbide,” J. Appl. Phys. 72, p. 3708, 1992.
3. F. B. McLean, C. W. Tipton, and J. M. McGarrity, “Electrical Characterization of n-Channel, 611-SiC JFETs as a Function of Temperature,” in Proc. 5th Internat. Conf. on Silicon Carbide and Related Materials-1993 (Internat. Inst. Phys. Conf. Series, No. 137), edited by M. Spencer et al, IOP Publishing Ltd., Bristol, England, 1994, p. 507.
4. H. Kang and R. B. Hilborn, Jr., “Resistivity and Hall Coefficient Measurements on SiC,” Proc. 3rd Internat. Conf. on Silicon Carbide, Miami Beach, FL, edited by R. C Marshall, J. W. Faust, Jr., and C. E. Ryan, 1973, p. 493.
5. T. Tachibana, H. S. Kong, Y. C. Wang, and R. F. Davis, “Hall Measurements as a Function of Temperature on Monocrystalline line SiC Thin Films,” J. Appl. Phys. 67, p. 6375, 1990.
6. W. J. Choyke, “Optical and Electronic Properties of SiC,” in Physics and Chemistry of Carbides, Nitrides, and Borides, edited by R. Freer, Kluwer Academic Publishers, Boston, 1989, p. 563.
7. R. F. Davis, G. Kelner, M. Shur, J. W. Palmour, and J. A. Edmond, “Thin Film Deposition and Microelectronic and Optoelectronic electronic Device Fabrication and Characterization in Monocrystalline rystalline Alpha and Beta Silicon Carbide,” Proc. IEEE 79, p. 677, 1991.
8. P. A. Ivanov and V. E. Chelnokov, “Recent Developments in SiC Single-Crystal Electronics,” Semicond. Sci. Technol. 7, p. 863, 1992.
9. W. J. Schaffer, H. S. Kong, G. H. Negley, and J. W. Palmour, “Hall Effect and C-V Measurements on Epitaxial 6H and 4H SIC,” in Proc. 5th Internat. Conf. on Silicon Carbide and Related Materials-1993 (Internat. Inst. Phys. Conf. Series, No. 137), edited by M. Spencer et al, IOP Publishing Ltd., Bristol, England, 1994, p. 155.
10. C. J. Scozzie, C. W. Tipton, W. M. Delancey, J. M. McGarrity, and F. B. McLean, “High Temperature Stressing of SIC JFETs at 300°C,” Proc. 1994 IEEE Internat. Rel. Phys. Symp., San Jose, CA, 1994, p. 351.
11. S. M. Sze, Physics of Semiconductor Devices, 2nd Ed., John Wiley, New York, 1981, p. 316 and 327.
12. J. A. Edmond, D. G. Waltz, S. Brueckner, H-S Kong, J. W. Palmour, and C. H. Carter, Jr., “High Temperature Rectifiers in 6H-Silicon Carbide,” Proc. 1st Internat. High Temp. Elect. Conf., Albuquerque, NM, 1991, p. 500.
13. P. Srichaikul, A.B. Chen, and W. J. Choyke, “Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model,” Amorphous and Crystalline Silicon Carbide IV, edited by C.Y. Yang, M. M. Rahman, and G. L. Harris, (Springer Proceedings in Physics, Vol. 71), Springer-Verlag, Berlin, 1992, p. 170.
14. C. H. Park, B-H. Cheong, K-H. Lee, and K. J. Chang, “Structural and Electronic Properties of Cubic, 2H, 4H, and 6H SiC,” Phys. Rev. B49, p. 4485, 1994.
15. V. A. J. van Lint, T. M. Flanagan, R. E. Leadon, J. A. Naber, and V. C. Rogers, Mechanisms of Radiation Effects in Electronic Materials, John Wiley, New York, Vol. 1, 1980, p. 270.
16. G. C. Messenger and M. S Ash, The Effects of Radiation on Electronic Systems, Van Nostrand Reinhold, New York, 1986, p. 157.
17. H. J. Stein and R. Gereth, “Introduction Rates of Electrically Driven Active Defects in n and p Type Silicon by Electron and Neutron Irradiation,” J. Appl. Phys. 39, p. 2890, 1968.
18. A. L. Barry, B. Lehmann, D. Fritsch, and D. Braunig, “Energy Dependence of Electron Damage and Displacement Threshold Energy in 6H Silicon Carbide,” IEEE Trans. Nucl. Sci. 38, p. 1111, 1991.
19. R. N. Kyutt, A. A. Lepneva, G. A. Lomakina, E. N. Mokhov, A. S. Tregubova, M. M. Shcheglov, and G. F. Yuldashev, “Formation of Defects During Annealing of Neutron-Irradiated Silicon Carbide,” Sov. Phys. Solid State 30, p. 1500, 1988.
20. D. K. Schroder, Semiconductor Material and Device Characterization, John Wiley, New York, 1990, p. 306.
21. S. M. Khanna, C Rejeb, A. Jorio, M. Parenteau, C. Carlone, and J. W. Gerdes, Jr., “Electron and Neutron Radiation-Induced Order Effect in Gallium Arsenide,” IEEE Trans. Nucl. Sci. 40, p. 1350, 1993.
22. A. Jorio, M. Parenteau, M. Aubin, C. Carlone, S. M. Khanna, and J. W. Gerdes, Jr., “A Mobility Study of the Radiation Induced Order Effect in Gallium Arsenide,” this issue, Dec. 1994.