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Volumn 48, Issue 1, 1978, Pages K55-K58

Investigation of radiation defects in GaAs by means of schottky diode characteristics

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EID: 84987145524     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2210480150     Document Type: Article
Times cited : (9)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.