-
1
-
-
33746967961
-
Development of Silicon Carbide Semiconductor Devices for High Temperature Applications
-
Albuquerque, NM, June
-
L. G. Matus, J. A. Powell and J. B. Petit, “Development of Silicon Carbide Semiconductor Devices for High Temperature Applications”, Trans. 1st Internat. High Temp. Elect. Conf., Albuquerque, NM, p.222, June 1991.
-
(1991)
Trans. 1st Internat. High Temp. Elect. Conf
, pp. 222
-
-
Matus, L.G.1
Powell, J.A.2
Petit, J.B.3
-
2
-
-
0003685974
-
6H-Silicon Carbide Transistors for High Temperature Operation
-
Albuquerque, NM, June
-
J. W. Palmour, H. Kong, D. G. Waltz, J. A. Edmond, & C. H. Carter, Jr., “6H-Silicon Carbide Transistors for High Temperature Operation”, Trans. 1st Internat. High Temp. Elect. Conf., Albuquerque, NM, p.229, June 1991.
-
(1991)
Trans. 1st Internat. High Temp. Elect. Conf
, pp. 229
-
-
Palmour, J.W.1
Kong, H.2
Waltz, D.G.3
Edmond, J.A.4
Carter, C.H.5
-
3
-
-
0005092628
-
Silicon Carbide Junction Devices
-
Chap. 9, edited by R. K. Williardson and A. C. Beer, Academic Press, San Diego, CA
-
R. B. Campbell and H-C Chang, “Silicon Carbide Junction Devices,” Semiconductors and Semi-Metals, Chap. 9, Vol. 7b, edited by R. K. Williardson and A. C. Beer, Academic Press, San Diego, CA, 1971.
-
(1971)
Semiconductors and Semi-Metals
, vol.7 b
-
-
Campbell, R.B.1
Chang, H.-C.2
-
4
-
-
84939708006
-
A Review of Radiation Damage in SiC
-
edited by N. B. Urli
-
W. J. Choyke, “A Review of Radiation Damage in SiC”, Radiation Effects in Semiconductors, edited by N. B. Urli, p. 58, 1976.
-
(1976)
Radiation Effects in Semiconductors
, pp. 58
-
-
Choyke, W.J.1
-
5
-
-
0026154377
-
The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Electronics
-
R. J. Trew, J. B. Yan and P. M. Mock, “The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Electronics”, Proc. IEEE, Vol 79, p. 598, 1991.
-
(1991)
Proc. IEEE
, vol.79
, pp. 598
-
-
Trew, R.J.1
Yan, J.B.2
Mock, P.M.3
-
6
-
-
0026158174
-
Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide
-
R. F. Davis, G. Kelner, M. Shur, J.W. Palmour, and J. A. Edmond, “Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide”, Proc. IEEE, Vol 79, p. 677, 1991.
-
(1991)
Proc. IEEE
, vol.79
, pp. 677
-
-
Davis, R.F.1
Kelner, G.2
Shur, M.3
Palmour, J.W.4
Edmond, J.A.5
-
7
-
-
0024737721
-
Optimum Semiconductors for High-Power Electronics
-
K. Shenai, R. S. Scott, and B. J. Baliga, “Optimum Semiconductors for High-Power Electronics”, IEEE Trans. Electron Dev., Vol. 36, p.1811, 1989.
-
(1811)
IEEE Trans. Electron Dev
, vol.36
-
-
Shenai, K.1
Scott, R.S.2
Baliga, B.J.3
-
8
-
-
0026393376
-
Energy Dependence of Electron Damage and Displacement Threshold Energy in 6H Silicon Carbide
-
A. L. Barry, B. Lehmann, D. Fritsch, and D. Braunig, “Energy Dependence of Electron Damage and Displacement Threshold Energy in 6H Silicon Carbide”, IEEE Trans. Nucl. Sci., Vol. 38, p. 1111, 1991.
-
(1991)
IEEE Trans. Nucl. Sci
, vol.38
, pp. 1111
-
-
Barry, A.L.1
Lehmann, B.2
Fritsch, D.3
Braunig, D.4
-
10
-
-
0003624966
-
High Temperature Rectifiers in 6H-Silicon Carbide
-
Albuquerque, NM, June
-
J. A. Edmond, D. G. Waltz, S. Brueckner, H-S Kong, J. W. Palmour and C. H. Carter, Jr., “High Temperature Rectifiers in 6H-Silicon Carbide”, Proc. 1st Internat. High Temp. Elect. Conf., Albuquerque, NM, p. 500, June 1991.
-
(1991)
Proc. 1st Internat. High Temp. Elect. Conf
, pp. 500
-
-
Edmond, J.A.1
Waltz, D.G.2
Brueckner, S.3
Kong, H.-S.4
Palmour, J.W.5
Carter, C.H.6
-
11
-
-
0016347384
-
Resistivity and Hall Coefficient Measurements on SiC
-
Miami Beach, FL, edited by R. C. Marshall, J. W. Faust, Jr. and C. E. Ryan
-
H. Kang and R. B. Hilborn, Jr., “Resistivity and Hall Coefficient Measurements on SiC”, Proc. 3rd Internat. Conf. on Silicon Carbide, Miami Beach, FL, edited by R. C. Marshall, J. W. Faust, Jr. and C. E. Ryan, 493, 1973.
-
(1973)
Proc. 3rd Internat. Conf. on Silicon Carbide
, vol.493
-
-
Kang, H.1
Hilborn, R.B.2
-
12
-
-
4444335713
-
Hall Measurements as a Function of Temperature on Monocrystalline SiC Thin Films
-
T. Tachibana, H. S. Kong, Y. C. Wang, and R. F. Davis, “Hall Measurements as a Function of Temperature on Monocrystalline SiC Thin Films”, J. Appl. Phys., Vol. 67, p. 6375, 1990.
-
(1990)
J. Appl. Phys
, vol.67
, pp. 6375
-
-
Tachibana, T.1
Kong, H.S.2
Wang, Y.C.3
Davis, R.F.4
-
13
-
-
0005595837
-
Optical and Electronic Properties of SiC
-
edited by R. Freer, Kluwer Academic Publishers, Boston
-
W. J. Choyke, “Optical and Electronic Properties of SiC”, Physics and Chemistry of Carbides, Nitrides, and Borides, edited by R. Freer, Kluwer Academic Publishers, Boston, 1989,.p. 563.
-
(1989)
Physics and Chemistry of Carbides, Nitrides, and Borides
, pp. 563
-
-
Choyke, W.J.1
-
14
-
-
33747697398
-
Radiation Effects on Junction Field Effect Transistors
-
W. Shedd, B. Buchanan and R. Dolan, “Radiation Effects on Junction Field Effect Transistors”, IEEE Trans. Nucl. Sci., Vol. NS-16, p. 87, 1969.
-
(1969)
IEEE Trans. Nucl. Sci
, vol.NS-16
, pp. 87
-
-
Shedd, W.1
Buchanan, B.2
Dolan, R.3
-
15
-
-
0017701799
-
Radiation Effects in Enhancement Mode GaAs Junction Field Effect Transistors
-
R. Zuleeg, J. K. Notthoff and K. Lehovec, “Radiation Effects in Enhancement Mode GaAs Junction Field Effect Transistors”, IEEE Trans. Nucl. Sci., Vol. NS-24, p. 2305, 1977.
-
(1977)
IEEE Trans. Nucl. Sci
, vol.NS-24
, pp. 2305
-
-
Zuleeg, R.1
Notthoff, J.K.2
Lehovec, K.3
-
16
-
-
84939713293
-
-
APRF, Aberdeen, MD, private communication
-
C. Heimbach, APRF, Aberdeen, MD, private communication.
-
-
-
Heimbach, C.1
-
17
-
-
32144463230
-
Introduction Rates of Electrically Driven Active Defects in n- and p-Type Silicon by Electron and Neutron Irradiation
-
H. J. Stein and R. Gereth, “Introduction Rates of Electrically Driven Active Defects in n- and p-Type Silicon by Electron and Neutron Irradiation”, J. Appl. Phys., Vol 39, p. 2890, 1968.
-
(1968)
J. Appl. Phys
, vol.39
, pp. 2890
-
-
Stein, H.J.1
Gereth, R.2
-
19
-
-
0003966563
-
-
John Wiley, New York
-
V. A. J. van Lint, T. M. Flanagan, R. E. Leadon, J. A. Naber, and V. C. Rogers, Mechanisms of Radiation Effects in Electronic Materials, John Wiley, New York, Vol. 1, 1980, p. 279.
-
(1980)
Mechanisms of Radiation Effects in Electronic Materials
, vol.1
, pp. 279
-
-
van Lint, V.A.J.1
Flanagan, T.M.2
Leadon, R.E.3
Naber, J.A.4
Rogers, V.C.5
-
20
-
-
0000922476
-
High-Field Transport in Wide Bandgap Semiconductors
-
D. K. Ferry, “High-Field Transport in Wide Bandgap Semiconductors”, Phys. Rev., Vol. B12, p. 2361, 1975.
-
(1975)
Phys. Rev
, vol.B12
, pp. 2361
-
-
Ferry, D.K.1
|