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Volumn 47, Issue 3 PART 1, 2000, Pages 533-538

GaAs LED based NIEL spectrometer for the space radiation environment

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC RADIATION; DOSIMETRY; IONIZING RADIATION; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SPACE APPLICATIONS;

EID: 0034206499     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856476     Document Type: Article
Times cited : (9)

References (29)
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    • G. P. SummersDisplacement Damage: Mechanisms and Measurement, Naval Research Laboratory Report, Washington D.C.1992.
  • 9
    • 33747370093 scopus 로고    scopus 로고
    • A. Van GirmekenNon Ionizing Energy Deposition in Silicon for Radiation Damage Studies, Fermi National Accelerator Laboratory, P.O.Box500, Batavia, IL60510, Batavia FN-522, October1989.
    • A. Van GirmekenNon Ionizing Energy Deposition in Silicon for Radiation Damage Studies, Fermi National Accelerator Laboratory, P.O.Box500, Batavia, IL60510, Batavia FN-522, October1989.
  • 10
    • 0029517909 scopus 로고    scopus 로고
    • A. L. Barry, A. J. Houdayer, P. F. Hinrichsen, W. G. Letourneau, and J. VincentThe Energy Dependence of Lifetime Damage Constants in GaAS for 1-500 MeV Protons, IEEE Trans. Nud. Sci., vol. NS-42,pp. 2104-2107,1995.
    • A. L. Barry, A. J. Houdayer, P. F. Hinrichsen, W. G. Letourneau, and J. VincentThe Energy Dependence of Lifetime Damage Constants in GaAS for 1-500 MeV Protons, IEEE Trans. Nud. Sci., vol. NS-42,pp. 2104-2107,1995.
  • 20
    • 33747372194 scopus 로고    scopus 로고
    • G. P. MakayLEO proton fluences, private communication,1995
    • G. P. MakayLEO proton fluences, private communication,1995,
  • 21
    • 33747334616 scopus 로고    scopus 로고
    • G. F. Mackay, J. Dubeau, and I. ThomsonRadiation Measurements on Russian Spacecraft MIR and BION-10, ,1995.
    • G. F. Mackay, J. Dubeau, and I. ThomsonRadiation Measurements on Russian Spacecraft MIR and BION-10, ,1995.
  • 22
    • 33747356467 scopus 로고    scopus 로고
    • P, F. Hinrichsen and A. J. HoudayerStudies of the Radiation Damage in SiC Light Emitting Diodes for NIEL Measurements, University of Montreal Report, Montreal1998.
    • P, F. Hinrichsen and A. J. HoudayerStudies of the Radiation Damage in SiC Light Emitting Diodes for NIEL Measurements, University of Montreal Report, Montreal1998.
  • 25
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    • K. Gillessen.TEMIC TELEPUNKEN, Postfach3535, D-74025 Heilbron, Germany1994.
    • K. Gillessen.TEMIC TELEPUNKEN, Postfach3535, D-74025 Heilbron, Germany1994.
  • 27
    • 0014746830 scopus 로고    scopus 로고
    • Electroluminescence in Amphoteric Silicon Doped GaAs Diodes. I. Steady-State Response
    • N. E, ByerElectroluminescence in Amphoteric Silicon Doped GaAs Diodes. I. Steady-State Response, J. Appl. Phys.,vol. 41,pp. 1597-1601,1970.
    • J. Appl. Phys.,vol. 41,pp. 1597-1601,1970.
    • Byer, N.E.1
  • 28
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    • J. F. Ziegler and J. P. BiersackTRIM98.01, ,95.9 ed. New York: Pergamon Press,1985.
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  • 29
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    • A. J. Houdayer, P. F. Hinrichsen, and A. L. BarryRadiation Effects of7.5-114 MeV protons incident on SiC LEDs, RADECS95, Arcachon, France, pp. 409-411,1995.
    • A. J. Houdayer, P. F. Hinrichsen, and A. L. BarryRadiation Effects of7.5-114 MeV protons incident on SiC LEDs, RADECS95, Arcachon, France, pp. 409-411,1995.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.