Displacement damage and dose enhancement in gallium arsenide and silicon

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 4382-4387

  woolf, S ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b MISSION RESEARCH CORPORATION   (United States)

^c ARCON CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; GAMMA RAYS; SEMICONDUCTING SILICON - RADIATION EFFECTS; SEMICONDUCTOR DEVICES - SEMICONDUCTOR METAL BOUNDARIES;

DOSE-ENHANCEMENT EFFECTS; NUCLEAR RADIATION EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0022184631     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334128     Document Type: Article

References (10)

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