Modeling bjt radiation response with non-uniform energy distributions of interface traps

IEEE Transactions on Nuclear Science

Volumn 47, Issue 3 PART 1, 2000, Pages 514-518

  Barnaby, H J ^a   Cirba, C ^a   Schrimpf, R D ^b   Rosier, S L ^b   Fouillat, P ^b   Montagner, X ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b VTC Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; DEFECTS; DIODES; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ELECTROSTATICS; INTERFACES (MATERIALS); IONIZING RADIATION; OXIDES; SURFACE PROPERTIES;

GATED DIODES; INTERFACE TRAPS; NONUNIFORM ENERGY DISTRIBUTIONS; RADIATION INDUCED OXIDE DEFECTS; RADIATION RESPONSE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034205962     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856473     Document Type: Article

References (11)

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