Characteristics of the ground-state lasing operation in V-groove quantum-wire lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 3, 2000, Pages 511-521

  Kim, T G ^a,b   Wang, X L ^a   Suzuki, Y ^a   Komori, K ^a   Ogura, M ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; THERMAL EFFECTS;

FLOW RATE MODULATION EPITAXY; GAIN SWITCHED LASERS; GROUND STATE LASING OPERATION; ONE DIMENSIONAL STRUCTURES; QUANTUM WIRE LASERS; SHORT PULSE GENERATION; THRESHOLD CURRENT;

PUMPING (LASER);

EID: 0034187829     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.865106     Document Type: Article

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