Self-limiting effects of flow rate modulation epitaxy of GaAs on patterned substrate

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 586-590

  Wang, Xue Lun ^a   Ogura, Mutsuo ^a   Matsuhata, Hirofumi ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Flow rate modulation epitaxy; Patterned substrate; Self limited growth; Surface migration

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SURFACE PHENOMENA; SURFACE TREATMENT;

SELF-LIMITED GROWTH; SURFACE MIGRATION; SURFACE RECONSTRUCTION;

SEMICONDUCTOR GROWTH;

EID: 0032477210     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00569-7     Document Type: Article

References (13)

1. J. Nishizawa, H. Abe, T. Kurabayashi, J. Electrochem. Soc. 132 (1985) 1197.
2. S.P. DenBaars, P.D. Dapkus, J. Crystal Growth 98 (1989) 195.
3. X.L. Wang, M. Ogura, H. Matsuhata, Jpn. J. Appl. Phys. 36 (1997) 1830.
4. N. Kobayashi, T. Makimoto, Y. Horikoshi, Jpn. J. Appl. Phys. 24 (1985) L962.
5. X.L. Wang, M. Ogura, H. Matsuhata, J. Crystal Growth 171 (1997) 341.
6. E. Kapon, in: A.C. Gossard (Ed.), Epitaxial Microstructures, Academic Press, New York, 1994.
7. X.L. Wang, M. Ogura, H. Matsuhata, Appl. Phys. Lett. 67 (1995) 3629.
8. X.L. Wang, M. Ogura, H. Matsuhata, Appl. Phys. Lett. 67 (1995) 804.
9. X.L. Wang, M. Ogura, H. Matsuhata, Mater. Sci. Eng. B51 (1998) 233.
10. E. Martinet, A. Gustafsson, G. Biasiol, F. Reinhart, E. Kapon, K. Leifer, Phys. Rev. B 56 (1997) R7096.
11. J. Osaka, N. Inoue, Y. Mada, K. Yamada, K. Wada, J. Crystal Growth 99 (1990) 120.
12. D.J. Chadi, Phys. Rev. Lett. 41 (1978) 1062.
13. D.K. Biegelsen, R.D. Bringans, J.E. Northrup, L.-E. Swartz, Phys. Rev. 41 (1990) 5701.