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Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages 570-574

GaAs/AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique

(5) Kim, Tae Geun a,c Son, Chang Sik a Kim, Eun Kyu a Min, Suk Ki b Park, J H b

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

c ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; LASER MODES; LASER TUNING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TEMPERATURE MEASUREMENT;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTOR LASERS;

EID: 0032631240 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/14/6/314 Document Type: Article

Times cited : (2)

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