Ultrathin silicon oxide and nitride - Silicon interface states

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 549-558

  Brillson, L J ^a   Young, A P ^a   Schafer J ^a   Niimi, H ^a   Lucovsky, G ^a  

^a OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC SPECTROSCOPY; BONDING; CATHODOLUMINESCENCE; ELECTRONIC DENSITY OF STATES; HYDROGENATION; PHASE INTERFACES; SILICA; SILICON NITRIDE; TEMPERATURE CONTROL; THICKNESS MEASUREMENT;

INTERFACES STATES; LOW ENERGY CATHODOLUMINESCENCE SPECTROSCOPY; OPTICAL TRANSITIONS; ULTRATHIN SILICON OXIDE;

ULTRATHIN FILMS;

EID: 0033356952     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-549     Document Type: Article

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