MeV Al+ and Al2+ ions implantation in Si(100): surface roughness and defects in the bulk

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 4, 2000, Pages 443-448

  Kuri, G ^a   Yang, T R ^a  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; ATOMS; MOLECULAR DYNAMICS; POSITIVE IONS; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

CHANNELING EXPERIMENT; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR EFFECT; SECONDARY DEFECT;

ION IMPLANTATION;

EID: 0034172295     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390051064     Document Type: Article

References (43)

1. A. Gutzmann, S. Klaumunzer, P. Meier: Phys. Rev. Lett. 74, 2256 (1995); H. Dammak, A. Dunlop, D. Lesueur, A. Brunelle, S. Della-Negra, Y. LeBeyec: Phys. Rev. Lett. 74, 1135 (1995)
2. A. Gutzmann, S. Klaumunzer, P. Meier: Phys. Rev. Lett. 74, 2256 (1995); H. Dammak, A. Dunlop, D. Lesueur, A. Brunelle, S. Della-Negra, Y. LeBeyec: Phys. Rev. Lett. 74, 1135 (1995)
3. P.R.W. Henkes, R. Klingelhofer: J. de Phys. C 2, 159 (1989); Y. Zhang, E.-J. Ding, T. Zhang: Nucl. Instrum. Methods Phys. Res. B 152, 307 (1999)
4. P.R.W. Henkes, R. Klingelhofer: J. de Phys. C 2, 159 (1989); Y. Zhang, E.-J. Ding, T. Zhang: Nucl. Instrum. Methods Phys. Res. B 152, 307 (1999)
5. See, for example, G. Kuri: Appl. Phys. A 68, 699 (1999) and references therein
6. M.V. Rao: Nucl. Instrum. Methods B 79, 645 (1993)
7. P.F. Byrne, N.W. Cheung, S. Tam, C. Hu, Y.C. Shib, J. Washburn, M. Strathman: Mater. Res. Soc. Symp. Proc. 27, 253 (1984) and references therein
8. D.K. Sadana, M.H. Norcott, R.G. Wilson, U. Damhen: Appl. Phys. Lett. 49, 1169 (1986)
9. E.L. Mathe, J.C. Desoyer: Phys. Status Solidi A 112, 511 (1989); Z.J. Horvath, M. Adam, Z. Makaro: Solid-state Electron. 42, 221 (1998)
10. E.L. Mathe, J.C. Desoyer: Phys. Status Solidi A 112, 511 (1989); Z.J. Horvath, M. Adam, Z. Makaro: Solid-state Electron. 42, 221 (1998)
11. M.G. Blain, S. Della-Negra, H. Joret, Y. LeBeyec, E.A. Schweikert: Phys. Rev. Lett. 63, 1625 (1989); S. Ohtani, Y. Mizutani, T. Takagi: Nucl. Instrum. Methods Phys. Res. B 80-81, 336 (1993)
12. M.G. Blain, S. Della-Negra, H. Joret, Y. LeBeyec, E.A. Schweikert: Phys. Rev. Lett. 63, 1625 (1989); S. Ohtani, Y. Mizutani, T. Takagi: Nucl. Instrum. Methods Phys. Res. B 80-81, 336 (1993)
13. C. Tomaschko, C. Schoppmann, M. Kraus, K. Kragler, G. Kreiselmeyer, G. Saemann-Ischenko, H. Voit, A. Brunelle, S. Della-Negra, Y. LeBeyec: Nucl. Instrum. Methods Phys. Res. B 117, 90 (1996)
14. J. Chaumont, H. Bernas, A. Kusnetsov, C. Clerc, L. Dumoulin: Nucl. Instrum. Methods Phys. Res. B 129, 436 (1997)
15. G.F. Cerofolini, L. Meda, C. Volpones: Mater. Res. Soc. Symp. Proc. 128, 181 (1989); T.A. Tombrello: Nucl. Instrum. Methods Phys. Res. B 99, 225 (1995)
16. G.F. Cerofolini, L. Meda, C. Volpones: Mater. Res. Soc. Symp. Proc. 128, 181 (1989); T.A. Tombrello: Nucl. Instrum. Methods Phys. Res. B 99, 225 (1995)
17. C. Tomaschko, D. Brandl, R. Kugler, M. Schurr, H. Voit: Nucl. Instrum. Methods Phys. Res. B 103, 407 (1995)
18. D. Shen, X. Lu, Z. Xia, X. Wang, Q. Zhao: Nucl. Instrum. Methods Phys. Res. B 129, 392 (1997)
19. T. Yamaguchi, J. Matsuo, M. Akizuki, C.E. Ascheron, G.H. Takaoka, I. Yamada: Nucl. Instrum. Methods Phys. Res. B 99, 237 (1995)
20. J.A. Davies, G. Foti, L.M. Howe, J.B. Mitchell, K.B. Winterbon: Phys. Rev. Lett. 34, 1441 (1975)
21. S. Ohtani, Y. Mizutani, T. Takagi: Nucl. Instrum. Methods Phys. Res. B 80-81, 336 (1993)
22. T.A. Tombrello: Nucl. Instrum. Methods Phys. Res. B 103, 318 (1995)
23. D.A. Thompson, R.S. Walker: Nucl. Instrum. Methods 132, 281 (1976)
24. A.I. Titov, S.O. Kucheyev: Nucl. Instrum. Methods Phys. Res. B 149, 129 (1999)
25. D. Courboin, A. Grouillet, E. Andre: Surf. Sci. 342, L1111 (1995)
26. K. Wien: Radiat. Eff. Defect. Solids 109, 137 (1989)
27. Y. Yamamura: Nucl. Instrum. Methods Phys. Res. B 62, 181 (1991)
28. J.P. Biersack, L.G. Haggmark: Nucl. Instrum. Methods 174, 257 (1980); we have used the version TRIM-95.9
29. T. Kaneko: Nucl. Instrum. Methods Phys. Res. B 153, 15 (1999); C. Denton, F.J. Perez-Perez, I. Abril, R. Garcia-Molina, N.R. Arista: Europhys. Lett. 35, 499 (1996); and references therein
30. T. Kaneko: Nucl. Instrum. Methods Phys. Res. B 153, 15 (1999); C. Denton, F.J. Perez-Perez, I. Abril, R. Garcia-Molina, N.R. Arista: Europhys. Lett. 35, 499 (1996); and references therein
31. O.W. Holland, M.K. El-Ghor, C.W. White: Appl. Phys. Lett. 53, 1282 (1988)
32. L. Sealy, R.C. Barklie, K.J. Reeson, W.L. Brown, D.C. Jacobson: Nucl. Instrum. Methods Phys. Res. B 62, 384 (1992)
33. T.A. Tombrello: Nucl. Instrum. Methods Phys. Res. B 95, 501 (1995)
34. D.A. Thompson, R.S. Walker, J.A. Davis: Radiat. Eff. 32, 135 (1977)
35. D.A. Thompson, R.S. Walker: Radiat. Eff. 36, 91 (1978)
36. M. Muller, D. Fink: Appl. Phys. A 61, 153 (1995)
37. S.K. Ghose, G. Kuri, Amal K. Das, B. Rout, D.P. Mahapatra, B.N. Dev: Nucl. Instrum. Methods Phys. Res. B 156, 125 (1999)
38. M. Tamura, N. Natsuaki, Y. Wada, E. Mitani: Nucl. Instrum. Methods B 21, 438 (1987)
39. K.S. Jones, S. Prussin, E.R. Weber: Appl. Phys. A 45, 1 (1988)
40. G. Kuri, D.W. Moon: Radiat. Eff. Defect. Solids (2000) in press
41. See, for example, C. Brizard, J.R. Regnard, J.L. Allain, A. Bourret, M. Dubus, A. Armigliato, A. Parisini: J. Appl. Phys. 75, 126 (1994)
42. S.J. Pearton, R. Hull, D.C. Jacobson, J.M. Poate, J.S. Williams: Appl. Phys. Lett. 48, 38 (1986); J.P. Donnelly: In III-V Semiconductor Materials and Devices, ed. by R.J. Malik (Elsevier, Amsterdam 1989) p. 331
43. S.J. Pearton, R. Hull, D.C. Jacobson, J.M. Poate, J.S. Williams: Appl. Phys. Lett. 48, 38 (1986); J.P. Donnelly: In III-V Semiconductor Materials and Devices, ed. by R.J. Malik (Elsevier, Amsterdam 1989) p. 331