Formation of Cu nanoparticles in GaAs using MeV ion implantation followed by thermal annealing

Applied Physics A: Materials Science and Processing

Volumn 68, Issue 6, 1999, Pages 699-703

  Kuri, G ^a,b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; CRYSTAL LATTICES; ION IMPLANTATION; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CUBE ON CUBE ORIENTATION; ION CHANNELING MEASUREMENT; MICROTWINS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032661772     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050963     Document Type: Article

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