A novel crystal defect in epitaxial wurtzite gallium nitride film

Materials Letters

Volumn 38, Issue 3, 1999, Pages 202-207

  Wang, S Q ^a,b   Liu, C P ^b  

^a INSTITUTE OF METAL RESEARCH   (China)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

61.16.D; 61.70; 68.55; 78.30.F; Crystal defect; Epitaxial growth; High resolution electron microscopy; Wurtzite GaN

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE; WURTZITE;

SEMICONDUCTING FILMS;

EID: 0033078085     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(98)00159-1     Document Type: Article

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