Porous silicon as a near-ideal disordered semiconductor

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 949-952

  Lubianiker, Y ^a   Balberg, I ^a   Partee, J ^b   Shinar, J ^b  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; GEOMETRY; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

MOBILITY GAP; NEAR IDEAL DISORDERED SEMICONDUCTOR; OPTICAL GAP; TETRAHEDRAL COVALENT NETWORK; TETRAHEDRALLY DISTORTED SHELL;

POROUS SILICON;

EID: 17344380674     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00093-2     Document Type: Article

References (24)

1. Z.C. Feng and R. Tsu, Porous Silicon (World Scientific, Singapore, 1995).
2. J.C. Vial et al., Phys. Rev. B45 (1992) 14171.
3. L. Paresi and M. Ceschini, Phys. Rev. B48 (1993) 17625.
4. M. Ben Chorin, F. Moller and F. Koch, J. Luminescence 57 (1993) 159.
5. P. Hlinomaz et al., Appl. Phys. Lett. 64 (1994) 3118.
6. E.V. Astrova et al., Soviet Phys., Semiconductors 28 (1994) 302.
7. Y. Lubianiker et al., Proc. of the 22nd Int. Conf. on the Phys. of Semiconductors (1994) p. 2129.
8. M. Enachescu et al., Proc. 21st Int. Conf. on the Phys. of Semiconductors (1992) p. 1439.
9. S.C. Bayliss et al., Solid State Commun. 91 (1994) 371.
10. B. Xi-mao et al., Proc. of the 21st Int. Conf. on the Phys. of Semiconductors (1992) p. 1447.
11. I. Sagnes et al., Appl. Phys. Lett. 62 (1993) 1155.
12. D.J. Lockwood, Solid State Commun. 92 (1994) 101.
13. Y. Kanemitsu et al., Phys. Rev. B42 (1993) 2827; Z. Iqbal and S. Vepreck, J. Phys. C., Solid State Phys. 15 (1982) 377.
14. Y. Kanemitsu et al., Phys. Rev. B42 (1993) 2827; Z. Iqbal and S. Vepreck, J. Phys. C., Solid State Phys. 15 (1982) 377.
15. A. Kux, F. Miller and F. Koch, Mater. Res. Soc. Symp. Proc. 283 (1993) 311.
16. M.W. Cole et al., Appl. Phys. Lett. 60 (1992) 2800.
17. D. Ritter, E. Zeldov and K. Weiser, Phys. Rev. B38 (1988) 8296.
18. R. Smith, Semiconductors (Cambridge, London, 1963).
19. I. Balberg, Phys. Rev. Lett. 59 (1987) 1305.
20. R. Shinar et al., J. Appl. Phys. 77 (1995) 3403.
21. C.R. Wronski et al., Phys. Rev. Lett. 63 (1989) 1420.
22. D. Weaire and M.F. Thorpe, Phys. Rev. B4 (1971) 2508; M.H. Cohen, J. Singh and F. Yonezawa, J. Non-Cryst. Solids 35-36 (1980) 55.
23. D. Weaire and M.F. Thorpe, Phys. Rev. B4 (1971) 2508; M.H. Cohen, J. Singh and F. Yonezawa, J. Non-Cryst. Solids 35-36 (1980) 55.
24. N.F. Mott and E.A. Davis, Electronic Processes in Non Crystalline Solids (Clarendon, Oxford, 1979).