Interface properties of Si3N4Si/n-GaAs metal-msulator-semiconductor structure using a Si interlayer

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 74, Issue 3, 1996, Pages 219-234

  Park, Dae Gyu ^a   Chen, Zhi ^a   Botchkarev, Andrei E ^a   Mohammad, S Noor ^a   Morkoç, Hadis ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041152138     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418639608243519     Document Type: Article

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