Nitride-based emitters on SiC substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3002, Issue , 1997, Pages 2-10

  Edmond, John A ^a   Kong, Hua Shuang ^a   Leonard, Michelle T ^a   Doverspike, Kathy ^a   Bulman, Gary E ^a   Weeks, Warren ^a   Irvine, Kenneth G ^a   Dmitriev, Vladimir A ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b HOWARD UNIVERSITY   (United States)

Author keywords

Aluminum gallium nitride; Chemical vapor deposition; Conductive buffer; Gallium nitride; Indium gallium nitride; Laser; Light emitting diode; Silicon carbide

Indexed keywords

CONDUCTIVE BUFFER; ELECTRICALLY PUMPED; EXTERNAL QUANTUM EFFICIENCY (EQE); HETERO STRUCTURES; INDIUM GALLIUM NITRIDE; LASER; LASER DIODE STRUCTURES; LASER STRUCTURING; LIGHT EMITTING DIODE; MULTIPLE QUANTUM WELL (MQM); P TYPE CONDUCTIVITIES; PEAK EMISSIONS; PHOTOPUMPING; ROOM TEMPERATURE PHOTOLUMINESCENCE (RT-PL); SEPARATE CONFINEMENT; SIC SUBSTRATES; SINGLE CRYSTAL THIN FILMS;

ALUMINA; ALUMINUM; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIODES; EPITAXIAL LAYERS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; INDIUM; INDUSTRIAL RESEARCH; LASERS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; NITRIDES; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); PHYSICAL OPTICS; PUMPING (LASER); QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SINGLE CRYSTALS; VAPORS;

GALLIUM ALLOYS;

EID: 0004558139     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.271027     Document Type: Conference Paper

References (4)

1. S. Nakamura, "InGaN Light-emitting diodes with quantum-well structures", Gallium Nitride and Related Materials, F. Ponce, R. Dupuis, S. Nakamura and J. Edmond, eds., Mat. Res. Soc. Symp. Proc. Vol. 395, pp. 879-887, Materials Research Society, Pittsburgh, 1996.
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto and H. Kiyoku, "Room temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes", Appl. Phys. Lett. 69, pp. 4056-4058, 1996.
3. M. Koike, N. Shibata, S. Yamasaki, S. Nagai, S. Asami, H. Kato, N. Koide, H. Amano and I. Akasaki, "Light emitting devices based on GaN and related compound semiconductors", Gallium Nitride and Related Materials, F. Ponce, R. Dupuis, S. Nakamura and J. Edmond, eds., Mat. Res. Soc. Symp. Proc. Vol. 395, pp. 889-895, Materials Research Society, Pittsburgh, 1996.
4. H. Amano, M. Kitoh, K. Hiramatsu and I. Akasaki, "Growth and luminescence properties of Mg-doped GaN prepared by MOVPE", J. Electrochem. Soc. 137, pp. 1639-1641, 1990.