Si-based optical devices using porous materials

Applied Surface Science

Volumn 92, Issue , 1996, Pages 598-605

  Mimura, H ^a   Matsumoto, T ^b   Kanemitsu, Y ^c  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT EMISSION; LOGIC GATES; POROUS MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

ELECTROCHEMICAL ANODIZATION; LIGHT EMITTING DEVICES; OPTICAL INVERTER; OPTICAL LOGIC GATES; THRESHOLD VOLTAGE;

OPTICAL DEVICES;

EID: 0030562378     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00302-9     Document Type: Article

References (27)

1. L.T. Canham, Appl. Phys. Lett. 57 (1990) 1046.
2. A. Richer, P. Steiner, F. Kozlowski and W. Lang, IEEE Electron Device Lett. 12 (1991) 691.
3. N. Koshida and H. Koyama, Appl. Phys. Lett. 60 (1992) 347.
4. F. Namavar, H.P. Maruska and N.M. Kalkhoran, Appl. Phys. Lett. 60 (1992) 2514.
5. T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura and K. Kitamura, Jpn. J. Appl. Phys. 31 (1992) L616.
6. P. Steiner, F. Kozlowski and W. Lang, Appl. Phys. Lett. 62 (1993) 2700.
7. P. Steiner, F. Kozlowski and W. Lang, IEEE Electron Device Lett. 14 (1993) 317.
8. T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura and K. Kitamura, Appl. Phys. Lett. 63 (1993) 1209.
9. N. Koshida, H. Koyama, Y. Yamamoto and G.J. Collins, Appl. Phys. Lett. 63 (1993) 2655.
10. K. Li, D.C. Diaz, Y. He and J.C. Campbel and C. Tsai, Appl. Phys. Lett. 64 (1994) 2394.
11. H. Mimura, T. Futagi, T. Matsumoto and Y. Kanemitsu, J. Non-Cryst. Solids 164-166 (1993) 949.
12. H. Mimura, T. Matsumoto, T. Futagi and Y. Kanemitsu, J. Phys. Soc. Jpn. Suppl. B 63 (1994) 203.
13. H. Mimura, T. Matsumoto and Y. Kanemitsu, Appl. Phys. Lett. 65 (1994) 3350.
14. Y. Kanemitsu, T. Matsumoto and H. Mimura, Extended Abstract of the 55th Autumn Meeting (The Japan Society of Applied Physics, Nagoya, 1994) p. II-713.
15. T. Matsumoto, N. Hasegawa, T. Tamaki, K. Ueda, T. Futagi, H. Mimura and Y. Kanemitsu, Jpn. J. Appl. Phys. 33 (1994) L35.
16. C. Tsai, K-H. Li, J. Sarathy, S. Shih, J.C. Campbell, B.K. Hance and J.M. White, Appl. Phys. Lett. 59 (1991) 2814.
17. T. Futagi, M. Katsuno, N. Ohtani, Y. Ohta, H. Mimura and K. Kawamura, Appl. Phys. Lett. 58 (1991) 2948.
18. T. Futagi, N. Ohtani, M. Katsuno, K. Kawamura, Y. Ohta, H. Mimura and K. Kitamura, J. Non-Cryst. Solids 137/138 (1991) 1271.
19. H. Mimura, M. Katsuno, T. Futagi, N. Ohtani, Y. Ohta and K. Kitamura, 10th Symp. Photoelectronic Image Devices, London, 1991 (IOP, Bristol, 1992) p. 371.
20. T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura and K. Kitamura, Mater. Res. Soc. Symp. Proc. 283 (1993) 389.
21. T. Matsumoto, T. Futagi, H. Mimura and Y. Kanemitsu, Phys. Rev. B 47 (1993) 13876.
22. Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi and H. Mimura, Phys. Rev. B 48 (1993) 2827.
23. H. Mimura, T. Futagi, T. Matsumoto, T. Nakamura and Y. Kanemitsu, Jpn. J. Appl. Phys. 33 (1994) 570.
24. Y. Kanemitsu, T. Futagi, T. Matsumoto and H. Mimura, Phys. Rev. B 49 (1994) 14732.
25. H. Mimura, T. Matsumoto and Y. Kanemitsu, presented at P1-35 in ICSFS-7.
26. T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, H. Mimura and Y. Kanemitsu, Appl. Phys. Lett. 64 (1994) 226.
27. A.G. Acheson, England Patent 17911 (1892).