Improved properties of polycrystalline GaN grown on silica glass substrate

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 387-391

  Hiroki, M ^a   Asahi, H ^a   Tampo, H ^a   Asami, K ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; ELECTRON CYCLOTRON RESONANCE; FUSED SILICA; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

FULL-WIDTH AT HALF-MAXIMUM (FWHM); GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034140453     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00576-X     Document Type: Article

References (6)

1. Iwata K., Asahi H., Asami K., Kuroiwa R., Gonda S. Jpn. J. Appl. Phys. 36:1997;L66.
2. Iwata K., Asahi H., Kuroiwa R., Asami K., Gonda S. J. Cryst. Growth. 188:1998;98.
3. Iwata K., Asahi H., Asami K., Ishida A., Kuroiwa R., Tampo H., Gonda S. J. Cryst. Growth. 189/190:1998;218.
4. Asahi H., Iwata K., Tampo H., Kuroiwa R., Hiroki M., Asami K., Nakamura S., Gonda S. J. Cryst. Growth. 200/201:1999;371.
5. Dingle R., Sell D.D., Stokowski S.E., Ilegems M. Phys. Rev. B. 4:1971;1211.
6. Fischer S., Seude G., Hofmann D.M., Kurth F., Anders F., Topf M., Meyer B.K., Bertram F., Schmidt M., Christem J., Eckey L., Holst J., Hoffmann A., Mensching B., Rauschenbach B. J. Cryst. Growth. 189/190:1998;556.