Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 371-375

  Asahi, H ^a   Iwata, K ^a   Tampo, H ^a   Kuroiwa, R ^a   Hiroki, M ^a   Asami, K ^a   Nakamura, S ^b   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL IMPURITIES; ELECTRON CYCLOTRON RESONANCE; FUSED SILICA; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

GAS SOURCE MOLECULAR BEAM EPITAXY (MBE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032690744     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01357-8     Document Type: Article

References (8)

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