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Volumn 188, Issue 1-4, 1998, Pages 98-102
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Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE
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Author keywords
Exciton; GaN; Gas source MBE; Glass substrate; PL; Polycrystal
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Indexed keywords
ELECTRON CYCLOTRON RESONANCE;
EXCITONS;
FUSED SILICA;
MOLECULAR BEAM EPITAXY;
OPTICAL PHASE CONJUGATION;
PHOTOLUMINESCENCE;
POLYCRYSTALLINE MATERIALS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
THERMAL EFFECTS;
X RAY CRYSTALLOGRAPHY;
GALLIUM NITRIDE;
GAS SOURCE MOLECULAR BEAM EPITAXY;
ION REMOVED ELECTRON CYCLOTRON RESONANCE (ECR) RADICAL CELL;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032097662
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00067-0 Document Type: Article |
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Times cited : (23)
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References (11)
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