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Volumn 348, Issue 3, 1996, Pages 227-242

Conventional and manipulated growth of Cu/Cu(111)

Author keywords

Atom solid scattering and diffraction elastic; Copper; Growth; Ion bombardment; Metallic surfaces; Molecular beam epitaxy; Oxygen; Surface diffusion

Indexed keywords

ANNEALING; COPPER; DEPOSITION; DIFFUSION; FILM GROWTH; ION BOMBARDMENT; METALLIC FILMS; MONOLAYERS; NUCLEATION; OXYGEN;

EID: 0030109910     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00988-4     Document Type: Article
Times cited : (90)

References (68)
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    • 0 is the normalized scattered intensity under anti-phase diffraction conditions.
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    • At 440 K ion bombardment results in layer-by-layer etching causing oscillations of the anti-phase intensity. These oscillations allow to relate the ion fluence to the overall amount of material, that is removed from the substrate. A similar behaviour for Pt(111) during sputtering has been previously reported by B. Poelsema, L.K. Verheij and G. Comsa, Phys. Rev. Lett. 53 (1984) 2500.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.