Molecular dynamics study of ion-induced defects on a silicon stepped surface

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 160, Issue 1, 2000, Pages 38-48

  Mazzone, A M ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; KINETIC ENERGY; MOLECULAR DYNAMICS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

ION-INDUCED DEFECTS;

ION BOMBARDMENT;

EID: 0033924698     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00580-7     Document Type: Article

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