Si (001) surface defects after extended high temperature annealing

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 276-281

  Barge, D ^a   Joly, J P ^a   Rolland, G ^a   Pichaud, B ^b  

^a CEA LETI   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; MORPHOLOGY; SEMICONDUCTOR DOPING; SURFACE STRUCTURE; THERMAL EFFECTS;

FLOATING ZONE CRYSTAL GROWTH; STEP BUNCHING;

SILICON WAFERS;

EID: 0033906797     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00390-6     Document Type: Article

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