Spatially controlled formation of an atomically flat Si(001) surface by annealing with a direct current in an ultrahigh vacuum

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1424-1427

  Ando, Atsushi ^a   Sakamoto, Kunihiro ^a   Miki, Kazushi ^a   Matsumoto, Kazuhiko ^a   Sakamoto, Tsunenori ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Atomic force microscopy; Atomic step free surface; Nano structure; Silicon

Indexed keywords

EID: 0001058333     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1424     Document Type: Article

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