Growth of 3″ and 4″ gallium arsenide crystals by the vertical gradient freeze (VGF) method

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 157-162

  Birkmann, B ^a   Rasp, M ^a   Stenzenberger, J ^a   Muller G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

INVERSE MODELLING; SILICON DOPING; VERTICAL GRADIENT FREEZE METHOD;

CRYSTAL GROWTH;

EID: 0033904921     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00832-5     Document Type: Article

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