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Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 560-565

Numerical simulation of the growth of 2″ diameter GaAs crystals by the vertical gradient freeze technique

(4) Weimann, H a Amon, J a Jung, Th a Muller G a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; FINITE ELEMENT METHOD; HEAT CONDUCTION; HEAT RADIATION; INDUSTRIAL FURNACES; SEMICONDUCTOR GROWTH; TEMPERATURE DISTRIBUTION;

QUASI STEADY STATE CALCULATIONS; SOFTWARE PACKAGE FIDAP; VERTICAL GRADIENT FREEZE TECHNIQUE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031244665 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00254-6 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.