Low dislocation density 3-inch Si doped GaAs crystals by Vertical Boat growth

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 279-282

  Hagi, Y ^a   Kawarabayashi, S ^a   Inoue, T ^a   Nakai, R ^a   Kohno, J ^a   Kawase, T ^a   Tatsumi, M ^a  

^a Itami Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); PHASE INTERFACES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMAL GRADIENTS;

DISLOCATION DENSITY; HORIZONTAL BRIDGMAN (HB) CRYSTALS; VERTICAL BOAT METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030382859     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)