Luminescence decay of the 1.54 μm emission from erbium in silicon

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 119-124

  Hartung, J ^a   Evans, J H ^a   Dawson, P ^a   Scholes, A P ^a   Taskin, T ^a   Huda, M Q ^a   Jeynes, C ^a   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC EXCITATION; ELECTRON ENERGY LEVELS; LOW TEMPERATURE EFFECTS; LUMINESCENCE OF INORGANIC SOLIDS; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON;

EXCITATION DENSITY; LUMINESCENCE DECAY; LUMINESCENCE TRANSIENTS; NONRADIATIVE PROCESSES; OPTICALLY ACTIVE CRYSTALS;

ERBIUM;

EID: 0030417017     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-119     Document Type: Conference Paper

References (11)