Gate length scaling in high performance InGaP/InGaAs/GaAs PHEMT's

IEEE Electron Device Letters

Volumn 21, Issue 4, 2000, Pages 141-143

  Fay, P ^a   Stevens, K ^b   Elliot, J ^b   Pan, N ^b  

^a University of Notre Dame   (United States)

^b KOPIN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; GATES (TRANSISTOR); HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SHORT CIRCUIT CURRENTS; TRANSCONDUCTANCE;

ALUMINUM GALLIUM ARSENIDE; INDIUM GALLIUM PHOSPHIDE; MODULATION DOPED FIELD EFFECT TRANSISTOR; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; SHORT CHANNEL EFFECTS; TRANSMISSION LINE MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033902588     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.830961     Document Type: Article

References (7)

1. M. Nihei, N. Hara, H. Suehiro, and S. Kuroda, "0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMT's with highly-doped 11.5 nm thick InGaP electron supply layers," Solid-State Electron., vol. 41, pp. 1647-1650, 1997.
2. N. Harada et al., "0.1 μm-gate InGaP/InGaAs HEMT technology for millimeter-wave applications," IEICE Trans. Electron., vol. E81-C, pp. 876-881, 1998.
3. P. Fay, K. Stevens, J. Elliot, and N. Pan, "Performance dependence of InGaP/InGaAs/GaAs pHEMT's on gate metallization," IEEE Electron Device Lett., vol. 20, pp. 554-556, 1999.
4. C. R. Bolognesi, M. W. Dvorak, and D. H. Chow, "Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's," IEEE Trans. Electron Devices, vol. 46, pp. 826-832, May 1999.
5. H. Rohdin, "Reverse modeling of E/D logic submicrometer MODFET's and prediction of maximum extrinsic MODFET current gain cutoff frequency," IEEE Trans. Electron Devices, vol. 37, pp. 920-934, Apr. 1990.
6. M. Moser et al., "Optical characterization of MOVPE grown InGaP layers," J. Cryst. Growth, vol. 124, pp. 333-338, 1992.
7. J. S Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors. New York: Wiley, 1999.