|
Volumn 73, Issue 1, 2000, Pages 54-59
|
Helium desorption from cavities induced by high energy 3He and 4He implantation in silicon
a a a b b c c |
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
BUBBLE FORMATION;
HELIUM;
ION IMPLANTATION;
MATHEMATICAL MODELS;
MORPHOLOGY;
TEMPERATURE PROGRAMMED DESORPTION;
TRANSMISSION ELECTRON MICROSCOPY;
ISOCHRONAL ANNEALING;
ISOTHERMAL ANNEALING;
NANO-CAVITIES;
NEUTRON DEPTH PROFILING;
NON-RUTHERFORD ELASTIC BACKSCATTERING;
NUCLEAR REACTION ANALYSIS;
THERMAL DESORPTION SPECTROMETRY;
SILICON WAFERS;
|
EID: 0033897574
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(99)00433-X Document Type: Article |
Times cited : (40)
|
References (13)
|