Radiation damage of π-v GaAs structures

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 395-398

  Chilingarov, A ^a   Sloan, T ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; IRRADIATION; MATHEMATICAL MODELS; NEUTRONS; PROTONS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

CHARGE COLLECTION EFFICIENCY; DARK CURRENT; GALLIUM ARSENIDE DETECTORS; ISOTHERMAL ANNEALING;

RADIATION DETECTORS;

EID: 0031118040     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)01246-1     Document Type: Article

References (7)

1. V.B. Chmil et al., Nucl. Instr. and Meth. A 236 (1993) 310.
2. V. B. Chmil et al., Nucl. Instr. and Meth. A 340 (1994) 328.
3. B.K. Jones et al., Proc 3rd Int. Workshop on Gallium Arsenide and Related compounds, San Miniato, Italy, 21-24 March (World Scientific, 1995) p. 73; K. Zdansky et al., J. Appl. Phys. 79 (1996).
4. B.K. Jones et al., Proc 3rd Int. Workshop on Gallium Arsenide and Related compounds, San Miniato, Italy, 21-24 March (World Scientific, 1995) p. 73; K. Zdansky et al., J. Appl. Phys. 79 (1996).
5. Z.Q. Fang and D.C. Look, J. Electron. Mater. 22 (1993) 1361.
6. A. Chilingarov and T. Sloan, Proc. 3rd Int. Workshop on Gallium Arsenide and Related compounds, San Miniato, Italy, 20-23 March (World Scientific, 1995) p. 52.
7. LDRB Status Report/RD8, CERN/LHCC 95-57, 7 November 1995.