MOS technology: Trends and challenges in the ULSI era

Microelectronics Reliability

Volumn 37, Issue 9, 1997, Pages 1301-1307

  Shah, Ashwin ^a   Yang, Ping ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC LOSSES; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR JUNCTIONS; ULSI CIRCUITS;

BACK END OF THE LINE (BEOL); FRONT END OF THE LINE (FEOL);

MOSFET DEVICES;

EID: 0031233757     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00002-4     Document Type: Article

References (13)

1. Rafferty, C. S., Yuong, H.-H., Eshraghi, S. A., Giles, M. D., Pinto, M. R. and Hillenius, S. J., Explanation of reverse short channel effects by defect gradients. In Int. Electron Devices Meet. (IEDM) Tech. Digest, 1993, 311-314.
2. Shahidi, G. G. et al., IEEE EDL, 1993, 14(8), 409.
3. Andoh, T. et al., IEDM, 1994, 79.
4. Hisamoto, D. et al., VLSI Tech., 1995, 115.
5. Rodder, M. et al., IEDM, 1994, 71.
6. Rodder, M. et al., IEDM, 1993, 879.
7. Mii, Y. et al., VLSI Tech., 1994, 9.
8. Boulin, D. M. et al., VLSI Tech., 1995, 65.
9. Koga, J. et al., IEDM, 1994, 475.
10. Monk, D. and Soan, D. Polymer for Electronic and Photonic Applications, ed. C. P. Wong. Academic Press, 1993, p. 120.
11. Pintchovski, F. IEDM Tech. Dig., 1994, 97.
12. Jeng, S., Chang, M., Kroger, T., McAnally, P. and Havemann, R., Symp. VLSI-Technol. Dig., Technical Papers, Honolulu, Hawaii, 7-9 June 1994, 73.
13. Jeng, S., Chang, M., Ting, L., Taylor, K., Lee, C., McAnally, P. and Havemann, R. H. Int. Symp., VLSI-Tech. Systems Appl. Proc. Technical Papers, Taipei, Taiwan, 31 May-2 June 1995 p. 164.