Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 1, 2000, Pages 330-336

  Lim, Sang Woo ^a,b   Shimogaki, Yukihiro ^a   Nakano, Yoshiaki ^a   Tada, Kunio ^a   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; DISSOCIATION; FILM PREPARATION; FLUORINE COMPOUNDS; MATHEMATICAL MODELS; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; ULSI CIRCUITS;

CONTINUOUS STIRRED TANK REACTOR; STEP COVERAGE; STICKING PROBABILITY;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0033885991     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.39.330     Document Type: Article

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