SCOPUS 정보 검색 플랫폼

Solid State Electronics

Volumn 37, Issue 11, 1994, Pages 1853-1862

Parameter extraction and 1/f noise in a surface and a bulk-type, p-channel LDD MOSFET

(4) Li, Xiaosong a Barros, C a Vandamme, E P a Vandamme, L K J a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); MATHEMATICAL MODELS; MEASUREMENTS; PARAMETER ESTIMATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; SURFACES;

CHANNEL LENGTH CORRECTION; DRAIN SOURCE VOLTAGE; EXTRAPOLATION; LOW DOPED DRAIN MOSFETS; LOW FIELD MOBILITY; MOBILITY DEGRADATION COEFFICIENT; PARAMETER EXTRACTION; POLYGATE;

MOSFET DEVICES;

EID: 0028533096 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(94)90177-5 Document Type: Article

Times cited : (43)

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