Hot-Electron-Induced Traps Studied Through the Random Telegraph Noise

IEEE Electron Device Letters

Volumn 12, Issue 6, 1991, Pages 273-275

  Fang, P ^a   Hung, Kwok K ^a,b   Ko, Ping K ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Department of Electrical Engineering University of California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - CHARGE CARRIERS; TELEGRAPH - NOISE, SPURIOUS SIGNAL;

HOT ELECTRON-INDUCED TRAPS; N-MOSFET'S; P-MOSFET'S; RANDOM TELEGRAPH NOISE; RANDOM TELEGRAPH SIGNAL (RTS) MEASUREMENTS; TRAP LOCATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026170313     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.82058     Document Type: Article

References (6)

1. M. J. Kirton et al., “Individual defects at the Si:Si O2 interface,” Semiconductor Sci. Technol., vol. 4, p. 1116, 1989.
2. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “Random telegraph noise of deep-submicrometer MOSFET's,” IEEE Electron Device Lett., vol. 11, no. 2, p. 90, 1990.
3. K. S. Rail et al., “Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low frequency (1/f?) noise,” Phys. Rev. Lett., vol. 52, p. 228, 1984.
4. J. Chung et al., “Deep-submicrometer MOS devices fabrication using a photoresist-ashing technique,” IEEE Electron Device Lett., vol. 9, p.186, 1988.
5. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “An automated system for measurement of random telegraph noise in metal-oxide-semiconductor field-effect-transistors,” IEEE Trans. Electron Devices, vol. 36, no. 6, p. 1217, 1989.
6. P. Heremans, R. Bellens, G. Groeseneken, and H. E. Maes, “Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET's,” IEEE Trans. Electron Devices, vol. 35, no. 12, p. 2194, 1988.