Observation of weak ordering effects and surface morphology study of InGaP grown by solid source molecular beam epitaxy

Microelectronics Journal

Volumn 31, Issue 1, 2000, Pages 15-21

  Yoon, S F ^a   Mah, K W ^a   Zheng, H Q ^a   Gay, B P ^a   Zhang, P H ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DESORPTION; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033883076     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00085-3     Document Type: Article

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