The effect of elastic strain on the optical properties of InGaP/GaSs grown using a valved phosphorus cracker cell in solid source mbe

Journal of Alloys and Compounds

Volumn 280, Issue 1-2, 1998, Pages 299-305

  Yoon, S F ^a   Mah, K W ^a   Zheng, H Q ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Indium gallium phosphate; MBE; Photoluminescence; Valence band splitting

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; ENERGY GAP; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; X RAY CRYSTALLOGRAPHY;

FULL WIDTH AT HALF MAXIMUM (FWHM); INDIUM GALLIUM PHOSPHATE; LATTICE MISMATCH; VALENCE BAND SPLITTING;

SEMICONDUCTOR GROWTH;

EID: 0032178940     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(98)00755-5     Document Type: Article

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