Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

Microelectronics Journal

Volumn 30, Issue 1, 1999, Pages 23-28

  Yoon, S F ^a   Gay, B P ^a   Zheng, H Q ^a   Ang, K S ^a   Wang, H ^a   Ng, G I ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

High electron mobility transistor; Indium gallium phosphide

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRON GAS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

INDIUM GALLIUM PHOSPHIDE; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE); TWO-DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032762290     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00077-9     Document Type: Article

References (15)

1. 0.85As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage, IEEE Electron Device Letters 18 (4) (1997) 150-152.
2. 0.49P/GaAs airbridge gate MISFET's grown by gas-source MBE, IEEE Transactions on Electron Devices 44 (6) (1997) 921-928.
3. M. Tam, M. King, C.S. Wu, M. Sanna, H. Edwards, R. McGlothin, Impact of gate recess profile on GaAs microwave device performance using AFM, GaAs MANTECH (1997) 18-21.
4. D. Geiger, E. Mittermeier, J. Dickmann, C. Geng, R. Winterhof, F. Scholz, E. Kohn, InGaP/InGaAs HFET with high current density and high cut-off frequencies, IEEE Electron Device Letters 16 (6) (1995) 259-261.
5. 1-xP epitaxial crystals, J. Appl. Phys. 43 (8) (1972) 3455-3460.
6. Y. Ohba, M. Ishikawa, H. Sugawara, M. Yamamoto, T. Nakanisi, Growth of high-quality InGaAlP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductor lasers, Journal of Crystal Growth 77 (1986) 374-379.
7. C.H. Yan, D.Z. Sun, H.X. Guo, X.B. Li, S.R. Zu, Y.H. Huang, Y.P. Zheng, M.Y. Kong, High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy, Journal of Crystal Growth 136 (1994) 306-309.
8. Ph. Maurel, J.C. Garcia, Ph. Regreny, J.P. Hirtz, E. Vassilakis, A. Parent, M. Baldy, C. Carriere, Room temperature 600 mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE, Electronics Letters 29 (1993) 91-93.
9. T. Shitara, K. Eberl, Electronic properties of InGaP grown by solid-source molecular-beam epitaxy with a GaP decomposition source, Appl. Phys. Lett. 65 (1994) 356-358.
10. 0.53As HEMT, IEEE Electronic Device Letters 11 (4) (1990) 153-155.
11. L.W. Laih, S.Y. Cheng, W.C. Wang, P.H. Lin, J.Y. Chen, W.C. Liu, W. Lin, High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET), Electronics Letters 33 (1) (1997) 98-99.
12. Y.F. Yang, C.C. Hsu, E.S. Yang, Integeration of GaInP/GaAs heterojunction bipolar transistor and high electron mobility transistors, IEEE Electron Device Letters 17 (7) (1996) 363-365.
13. M. Missous, A.A. Azta, A. Sandhu, InGaP/InGaAs/GaAs high electron mobility transistor structure grown by solid source molecular beam epitaxy using GaP as phosphorus source, Jpn. J. Appl. Phys. 36 (6a) (1997) 647-649.
14. 0.52P grown by molecular beam epitaxy using a valved phosphorus cracker cell, Journal of Crystal Growth (1998) in press.
15. S.R. Bahl, J.A. del Alamo, A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs, IEEE Transactions on Electron Devices 40 (8) (1993) 1558-1560.