Characteristics of Polycrystalline-Si Thin Film Transistors Fabricated by Excimer Laser Annealing Method

IEEE Transactions on Electron Devices

Volumn 41, Issue 10, 1994, Pages 1876-1879

  Kusumoto, Naoto ^b   Yamazaki, Shumpei ^b  

^a SEMICONDUCTOR ENERGY LABORATORY CO LTD   (Japan)

^b Giant Electronics Technology Corporation ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; EXCIMER LASERS; GRAIN BOUNDARIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS; THIN FILMS;

ACTIVATION ENERGY; DRAIN CURRENT; FIELD EFFECT MOBILITY; POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; SOLID PHASE CRYSTALLIZATION; TRAP STATE DENSITY;

TRANSISTORS;

EID: 0028517842     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324604     Document Type: Article

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