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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 114-117

Optical characterization of reverse biased porous silicon light emitting diode

(8) Lazarouk, S a,b,c Katsouba, S a,b,c Tomlinson, A a,b,c Benedetti, S a,b,c Mazzoleni, C a,b,c Mulloni, V a,b,c Mariotto, G a,b,c Pavesi, L a,b,c

a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS (Belarus)

b CNR (Italy)

c UNIVERSITY OF TRENTO (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; PASSIVATION; PHOTOLUMINESCENCE; POROUS SILICON; PROTECTIVE COATINGS; RAMAN SCATTERING;

BAND-TO-BAND RECOMBINATION;

LIGHT EMITTING DIODES;

EID: 0033875301 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00280-9 Document Type: Article

Times cited : (8)

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