Different location of photo- and electroluminescence in n-type porous silicon

Physica Status Solidi (A) Applied Research

Volumn 161, Issue 1, 1997, Pages

  Babanov, Yu E ^a   Buchin, E Yu ^a   Prokaznikov, A V ^a   Svetovoy, V B ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345889407     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199705)161:13.0.CO;2-Y     Document Type: Article

References (3)

1. P. M. FAUCHET, J. Lumin. 70, 294 (1996).
2. L. PAVESI, Microelectronics J. 27, 437 (1996).
3. N. LALIC and J. LINNROS, J. Appl. Phys. 80, 5971 (1996).