Very high hole mobility in P-type Si/SiGe modulation-doped heterostructures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 3 B, 1997, Pages

  Tsai, Wen Chung ^a   Chang, Chun Yen ^a   Huang, Guo Wei ^a   Fang, Frank Fu ^a   Chang, Yang Hueng ^a   Huang, Chen Feng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; HALL EFFECT; MAGNETORESISTANCE; QUANTUM THEORY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; VACUUM APPLICATIONS;

HOLE EFFECTIVE MASS; MAGNETOTRANSPORT MEASUREMENT; MODULATION DOPED HETEROSTRUCTURE; QUANTUM HALL EFFECT; SHEET CARRIER CONCENTRATION; SHUBNIKOV-DE HASS OSCILLATION; TWO DIMENSIONAL HOLE GAS;

HETEROJUNCTIONS;

EID: 0031096706     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l323     Document Type: Article

References (16)